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NTMD5836NL
Power MOSFET
40 V, Dual N ? Channel, SOIC ? 8
Features
? Asymmetrical N Channels
? Low R DS(on)
? Low Capacitance
? Optimized Gate Charge
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
N ? Channel 1 N ? Channel 2
D1 D2
Channel 1
V (BR)DSS
40 V
R DS(on) Max
12 m W @ 10 V
I D Max
(Notes 1 and 2)
11 A
G1
S1
G2
S2
16 m W @ 4.5 V
Channel 2
40 V
20 m W @ 10 V
36.5 m W @ 4.5 V
6.5 A
MARKING DIAGRAM *
AND PIN ASSIGNMENT
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: T J = 1 W * 85 ° C/W + 25 ° C = 110 ° C
8
1
SOIC ? 8
CASE 751
8
D1 D1 D2 D2
5836NL
AYWW G
G
1
S1 G1 S2 G2
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTMD5836NLR2G
Package
SOIC ? 8
(Pb ? Free)
Shipping ?
2500 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
? Semiconductor Components Industries, LLC, 2012
February, 2012 ? Rev. 1
1
Publication Order Number:
NTMD5836NL/D
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